MOSFETs

Haiben has supplied electronic components from Shenzhen since 2013, and our catalogue includes a compact but carefully chosen transistor range: bipolar transistors, digital (pre-biased) types, Darlington and composite devices, and MOSFETs. For purchasing teams and hardware engineers, this page groups the MOSFET range, explains how we split it by channel and rating, and points to the selection criteria that matter when you specify a MOSFET transistor for a design.

The MOSFET range at a glance

The MOSFET portion of the catalogue is organised by channel, package and voltage class, so buyers can narrow the list quickly before checking the datasheet. Current entries include:

• VC9320A-1 — SOT-723, N-channel, VDS 20 V, ID 1.0 A, RDS(ON) 160 mOhm typ at VGS 4.5 V and 180 mOhm typ at 2.5 V, ESD capability HBM 3 kV.
• VCAA3134KLC — SOT-883, N-channel, VDS 20 V, ID 0.9 A, RDS(ON) below 250 mOhm at VGS 4.5 V and below 350 mOhm at 2.5 V; high-density trench cell design for low on-resistance, optimised for switching performance.
• VC1012F — SOT-523, N-channel, 150 mW, ESD 2000 V.
• VC7002HX — SOT-23, N-channel enhancement MOSFET, VDSS 60 V, 350 mW, low RDS(ON), low gate threshold voltage, low input capacitance, ESD protected up to 2 kV.
• VC2301HX-2.3A — SOT-23, P-channel MOSFET; one listing describes TrenchFET construction.
• VCE3139KHX — SOT-523, P-channel, VDSS -20 V, 150 mW.

These parts sit alongside our BJT, digital transistor and composite transistor lines, so a single enquiry can cover several positions on a board. If you are new to the device family, our explainer on what a MOSFET is covers the basic structure and switching behaviour before you read the tables.

N-channel and P-channel: the two halves

The range divides cleanly by channel polarity. N-channel parts such as the VC9320A-1, VCAA3134KLC, VC1012F and VC7002HX are typically used for low-side switching, where the source sits at or near ground and the gate is driven above it. P-channel parts such as the VC2301HX-2.3A and VCE3139KHX are more often seen in high-side or load-switching positions, where the gate is pulled below the source rail to turn the device on.

Browse the two groups separately: N-channel MOSFETs and P-channel MOSFETs. The split matters at the enquiry stage because channel choice fixes the gate-drive arrangement, and therefore which RDS(ON) figure in the datasheet is the relevant one.

The ratings that decide selection

Most MOSFET searches are information-led: engineers want to understand which parameter limits a design, not just find a part number. Four ratings usually decide the choice:

• VDS / VDSS — the drain-source voltage the device must block. The 20 V N-channel parts and the 60 V VC7002HX cover different rails; the P-channel VCE3139KHX is rated at VDSS -20 V.
• ID — continuous drain current, quoted here as 1.0 A for the VC9320A-1 and 0.9 A for the VCAA3134KLC.
• RDS(ON) at the actual gate drive — the on-resistance is only meaningful at the VGS you will apply. Note that the 20 V parts publish values at both 4.5 V and 2.5 V VGS, which matters for low-voltage logic drive.
• Package and ESD — SOT-723, SOT-883, SOT-523 and SOT-23 differ in footprint and dissipation; the small-signal parts carry 150 mW or 350 mW ratings, and several MOSFETs quote ESD capability (HBM 3 kV on the VC9320A-1, 2 kV on the VC7002HX).

MOSFET transistor roles and specifying

In practice a MOSFET transistor in this range fills one of a few roles: load switching from a logic pin, small-signal switching, level shifting, or simple power control on a compact board. The trench-cell construction of the VCAA3134KLC and the low gate threshold and low input capacitance of the VC7002HX illustrate how process and cell design are tuned for different jobs.

The rest of the catalogue supports the same design conversation. Bipolar devices (VC3904TB, VC3906B, VC8050X-0.3A, VCSS8050B-1.5A, VC2N4401Z, VC2N3906Z, VC2SC4617F) cover conventional amplification and switching; digital transistors (VC143ZEF, VC143ZME) integrate the base resistor network; and the Darlington / Composite Transistors category includes the VC5853DCJ MOSFET-Schottky composite and the VCMNT32D PNP power transistor with N-MOSFET. To specify, send us the channel, VDS, ID, the RDS(ON) limit at your gate voltage, the package you can place, and any ESD requirement — that set is enough to shortlist from the range.

Frequently asked questions

Which MOSFET should I start with for a 20 V low-side switch?

Start from the N-channel 20 V parts: the VC9320A-1 in SOT-723 (ID 1.0 A, RDS(ON) 160 mOhm typ at VGS 4.5 V) or the VCAA3134KLC in SOT-883 (ID 0.9 A, RDS(ON) below 250 mOhm at 4.5 V). Choose between them on package, current margin and the gate voltage your circuit can supply.

Do you offer P-channel MOSFETs for high-side switching?

Yes. The P-channel entries are the VC2301HX-2.3A in SOT-23 and the VCE3139KHX in SOT-523 (VDSS -20 V, 150 mW). Check the gate-drive arrangement and the on-resistance at your actual VGS before fixing the choice.

Can I combine MOSFETs with other transistor types in one order?

Yes. MOSFETs sit in the same catalogue as the bipolar, digital and Darlington/composite transistor lines, so a single enquiry can cover several device types. Include the ratings and packages for each position and we will respond against the published data.